| PART |
Description |
Maker |
| S13003AD |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
| S13003ADL |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
| 2N2905ALE3 JANSM2N2904AL |
PNP Transistor
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| SBF13005 |
30W Bipolar Junction Transistor, 4A Ic, 400V Vceo, 700V Vces
High Voltage Fast-Switching NPN Power Transistor
|
SemiWell Semiconductor
|
| 2N6649E3 2N6648E3 |
BJT( BiPolar Junction Transistor)
Darlington Transistors
|
Microsemi
|
| MJH16002A MJH16004 |
Bipolar Junction Transistor
NPN SILICON POWER TRANSISTORS
|
New Jersey Semiconductors
New Jersey Semi-Conductor P...
|
| MMBT2131T3 MMBT2131T1 ON2108 |
GENERAL PURPOSE TRANSISTORS
From old datasheet system
PNP Bipolar Junction Transistor
|
ONSEMI[ON Semiconductor]
|
| MMBT2132 MMBT2132T1-D |
General Purpose Transistors NPN Bipolar Junction Transistor (Complementary PNP Device: MMBT2131T1/T3)
|
ON Semiconductor
|
| BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| IRG4BC29K IRG4BC30K IRG4BC30 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
