| PART |
Description |
Maker |
| APTDF200H120G |
FRED 50-1700V
|
Microsemi
|
| APTDF100H170G |
FRED 50-1700V
|
Microsemi
|
| APT50DF170HJ |
FRED 50-1700V
|
Microsemi
|
| APT60DF20HJ |
FRED 50-1700V
|
Microsemi
|
| STC04IE170HV |
Emitter switched bipolar transistor ESBT? 1700V - 4A - 0.17 W
Emitter switched bipolar transistor ESBT㈢ 1700V - 4A - 0.17 W
|
STMicroelectronics
|
| CM300DU-34KA |
IGBT Modules:1700V
|
Mitsubishi Electric Corporation
|
| SIGC104T170R2C |
IGBTs - HV Chips - SIGC104T170R2C, 1700V, 50A
|
Infineon
|
| SIGC101T170R3 |
IGBTs - HV Chips - SIGC101T170R3, 1700V, 75A
|
Infineon
|
| BYP100 C67047-A2254-A2 BYP300 C67047-A2250-A2 |
From old datasheet system
FRED DIODE (FAST RECOVERY EPITAXIAL DIODE SOFT RECOVERY CHARACTERISTICS)
FRED-FET Diode
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| 2MBI450VN-170-50 |
IGBT MODULE (V series) 1700V / 450A / 2 in one package
|
Fuji Electric
|
| 2MBI1000VXB-170E-50 |
IGBT MODULE (V series) 1700V / 1000A / 2 in one package
|
Fuji Electric
|
