| PART |
Description |
Maker |
| IRKT41-04 IRKT41-10 IRKT41-14 IRKT41-12 IRKT41-06 |
Silicon Controlled Rectifier, 62.8 A, 400 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 1000 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 1400 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 1200 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 600 V, SCR, TO-240AA
|
Vishay Semiconductors
|
| IRKLF102-08HJ IRKLF112-08HN IRKLF102-06HK IRKLF102 |
164.85 A, 800 V, SCR
Silicon Controlled Rectifier, 250 A, 800 V, SCR, POWER, INT-A-PAK-5
Silicon Controlled Rectifier, 164.85 A, 600 V, SCR
Silicon Controlled Rectifier, 164.85 A, 1200 V, SCR
|
Vishay Semiconductors
|
| NTE5513 NTE5511 NTE5512 |
Silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 400V. Forward current RMS Ifrms = 5A.
Silicon Controlled Rectifier (SCR) 5 Amp
|
NTE[NTE Electronics]
|
| TYN058 |
SILICON CONTROLLED RECTIFIER,50V V(DRM)
Silicon controlled rectifiers
From old datasheet system
|
ST Microelectronics
|
| 2N1795F 2N1798F 2N1792F 2N1793F 2N1794F 2N1797F 2N |
Silicon Controlled Rectifiers (fase)
Silicon Controlled Rectifier; Package: TO-83; IT (Av) (A): 70; VTM (V): 2.1; VGT (V): 3; IGT (µA): 70000; tq (nsec): 40000; Vrrm (V): 400; 110 A, SCR, TO-208AD
|
Microsemi Corporation
Microsemi, Corp.
|
| NTE5558 NTE5550 NTE5552 NTE5554 |
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A.
Silicon Controlled Rectifiers
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
|
NTE[NTE Electronics]
|
| CPA80A12AA4-12FC CPAT45A12AA4-12FC CPA250V2AA4-12F |
SILICON CONTROLLED SWITCH ADD-A-PAK
3 PHASE, 400 A, SILICON, RECTIFIER DIODE
SCR
3 PHASE, 1000 A, SILICON, RECTIFIER DIODE
|
|
| 2N689A 2N684A 2N686A 2N684 2N691 2N683 2N688 2N692 |
SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS 25 A, 150 V, SCR, TO-48
SILICON CONTROLLED RECTIFIER 25 AMPS 25 THRU 800 VOLTS
Leaded Thyristor SCR
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
Central Semiconductor C...
|
| SM12CXC220 SM34CXC614 SM36CXC604 SM38CXC624 SM38CX |
860 A, 1200 V, SILICON, RECTIFIER DIODE
1160 A, 3400 V, SILICON, RECTIFIER DIODE
1010 A, 3600 V, SILICON, RECTIFIER DIODE
1106 A, 3800 V, SILICON, RECTIFIER DIODE
2640 A, 3800 V, SILICON, RECTIFIER DIODE
1106 A, 3400 V, SILICON, RECTIFIER DIODE
435 A, 1500 V, SILICON, RECTIFIER DIODE
440 A, 600 V, SILICON, RECTIFIER DIODE
1160 A, 3800 V, SILICON, RECTIFIER DIODE
1160 A, 4200 V, SILICON, RECTIFIER DIODE
940 A, 800 V, SILICON, RECTIFIER DIODE
940 A, 1800 V, SILICON, RECTIFIER DIODE
940 A, 400 V, SILICON, RECTIFIER DIODE
940 A, 1000 V, SILICON, RECTIFIER DIODE
940 A, 600 V, SILICON, RECTIFIER DIODE
940 A, 1600 V, SILICON, RECTIFIER DIODE
1106 A, 4000 V, SILICON, RECTIFIER DIODE
310 A, 2600 V, SILICON, RECTIFIER DIODE
370 A, 2600 V, SILICON, RECTIFIER DIODE
2700 A, 2600 V, SILICON, RECTIFIER DIODE
860 A, 1400 V, SILICON, RECTIFIER DIODE
440 A, 400 V, SILICON, RECTIFIER DIODE
440 A, 800 V, SILICON, RECTIFIER DIODE
435 A, 1600 V, SILICON, RECTIFIER DIODE
435 A, 1800 V, SILICON, RECTIFIER DIODE
527 A, 3200 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| MCR100-8G MCR100-4G MCR100-004G |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors 0.8 A, 200 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifier; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 5000
|
On Semiconductor
|
| IRKH57-08 IRKH42-04 IRKH42-12S90 IRKL41-12S90 |
86.35 A, 800 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 400 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 1200 V, SCR, TO-240AA
|
Vishay Semiconductors
|
| MCR718 MCR718T4 MCR716T4 MCR716 |
Silicon Controlled Rectifier (Reverse Blocking Thyristors)
Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS)
Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 - 600 VOLTS)
|
ONSEMI[ON Semiconductor]
|
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