| PART |
Description |
Maker |
| HEF4737BF HEF4737BN HEF4737 HEF4737B HEF4737BD HEF |
Quadruple static decade counters 10年翻两番的静态计数器
COUNTER|UP|DECADE|CMOS|DIP|18PIN|PLASTIC 4000/14000/40000 SERIES, ASYN POSITIVE EDGE TRIGGERED 17-BIT UP DECADE COUNTER, PDIP18
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| HEF4737VP |
Quadruple static decade counters
|
Philips
|
| AM28F512A-120JEB AM28F512A-120PEB AM28F512A-120FEB |
Divide-By-Twelve Decade Counter 14-PDIP 0 to 70
Divide-By-Twelve Decade Counter 14-SOIC 0 to 70
Quadruple 2-Input Positive-NAND Gates 14-SOIC -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SO -40 to 85
Quadruple 2-Input Positive-Nor Gates 14-TVSOP -40 to 85
4-Bit Binary Counters 14-SO 0 to 70
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
Quadruple 2-Input Positive-Nor Gates 14-TSSOP -40 to 85 2正输入或非门 14-TSSOP封装40℃到85
Hex Inverters 14-SSOP -40 to 85 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
Hex Inverters 14-TVSOP -40 to 85 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
Hex Inverters 14-SO -40 to 85 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
4-Bit Binary Counters 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32
Quadruple 2-Input Positive-NAND Gates 14-TVSOP -40 to 85 64K X 8 FLASH 12V PROM, 200 ns, PDSO32
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 64K X 8 FLASH 12V PROM, 120 ns, PQCC32
Quadruple 2-Input Positive-NAND Gates 14-TSSOP -40 to 85 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
Hex Inverters 14-SOIC -40 to 85 64K X 8 FLASH 12V PROM, 90 ns, PDIP32
Quadruple 2-Input Positive-Nor Gates 14-SO -40 to 85 64K X 8 FLASH 12V PROM, 70 ns, PQCC32
Quadruple 2-Input Positive-Nor Gates 14-SOIC -40 to 85
|
Advanced Micro Devices, Inc.
PROM
ADVANCED MICRO DEVICES INC
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HM628128A HM628128ALFP-10 HM628128ALFP-10L HM62812 |
131,072-word X 8-bit High Speed CMOS Static RAM 131,072字8位高速CMOS静态RAM
Quadruple 2-Line To 1-Line Data Selectors/Multiplexers 16-CFP -55 to 125
Quadruple 2-Line To 1-Line Data Selectors/Multiplexers 16-CDIP -55 to 125
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| CAT59C11P CAT59C11PI CAT59C11K-TE13 CAT59C11K-TE7 |
256K x 4 Static RAM
2M x 8 Static RAM
Microwire Serial EEPROM
16-Mbit (2M x 8) Static RAM 微型导线串行EEPROM
512K x 32 Static RAM
|
Atmel, Corp.
|
| 3D7304 3D7304-25 3D7304-100 3D7304-15 3D7304-20 3D |
MONOLITHIC QUADRUPLE FIXED DELAY LINE
Delay 25 /-1 ns, monolithic quadruple fixed delay line
Delay 100 /-2 ns, monolithic quadruple fixed delay line
Delay 10 /-1 ns, monolithic quadruple fixed delay line
Delay 15 /-1 ns, monolithic quadruple fixed delay line
Delay 20 /-1 ns, monolithic quadruple fixed delay line
Delay 200 /-4 ns, monolithic quadruple fixed delay line
Delay 30 /-1 ns, monolithic quadruple fixed delay line
Delay 300 /-6 ns, monolithic quadruple fixed delay line
Delay 40 /-1 ns, monolithic quadruple fixed delay line
Delay 400 /-8 ns, monolithic quadruple fixed delay line
Delay 50 /-1 ns, monolithic quadruple fixed delay line
Delay 500 /-10 ns, monolithic quadruple fixed delay line
|
Data Delay Devices Inc
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M54_M74HC192 M54_M74HC193 M74HC192B1 M74HC192B1R 7 |
HC193 - SYNCHRONOUS UP/DOWN BINARY COUNTER, HC192 - SYNCHRONOUS UP/DOWN DECADE COUNTER
SYNCHRONOUS UP/DOWN DECADE(/BINARY) COUNTER
HC192 - SYNCHRONOUS UP/DOWN DECADE COUNTER HC193 - SYNCHRONOUS UP/DOWN BINARY COUNTER
SYNCHRONOUS UP/DOWN DECADE(BINARY) COUNTER
SYNCHRONOUS UP/DOWN DECADE(,BINARY) COUNTER
|
SGS Thomson Microelectronics
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| MMC4029 |
PRESETTABLE UP / DOWN COUNTER BINARY OR BCD - DECADE
Synchronous presettable Up/Down counter, binary or BCD-decade
|
Micro Electronics
Microelectronica
|
| SN74LS168N SN54LS168 74LS168 SN54LS169J SN54LS168J |
BCD DECADE/MODULO 16 BINARY SYNCHRONOUS BI-DIRECTIONAL COUNTERS BCD码十6二进制同步的双向计数
BCD DECADE/MODULO 16 BINARY SYNCHRONOUS BI-DIRECTIONAL COUNTERS LS SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT BIDIRECTIONAL BINARY COUNTER, PDSO16
BCD DECADE/MODULO 16 BINARY SYNCHRONOUS BI-DIRECTIONAL COUNTERS LS SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT BIDIRECTIONAL BINARY COUNTER, CDIP16
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
Motorola Inc
|
