| PART |
Description |
Maker |
| CSD794Y CSD794O CSD794AY |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744Y 10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB744O 10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744AY
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Continental Device India Limited
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| CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y 25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O 25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体 25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
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Continental Device India, Ltd. CDIL[Continental Device India Limited] Continental Device Indi...
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| CDL13005 CDL13005A CDL13005B CDL13005C CDL13005E |
75.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 4.000A Ic, 40 - 50 hFE. 75.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 4.000A Ic, 20 - 31 hFE. From old datasheet system NPN PLASTIC POWER TRANSISTOR 75.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 4.000A Ic, 10 - 21 hFE. 75.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 4.000A Ic, 30 - 41 hFE.
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Continental Device India Limited ETC[ETC] List of Unclassifed Manufacturers
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| 2N6123 2N6124 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. 40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE.
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Continental Device India Limited
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| CFD611 |
60.000W Medium Power NPN Plastic Leaded Transistor. 110V Vceo, 6.000A Ic, 1000 hFE.
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Continental Device India Limited
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| CFD811 |
65.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 1000 hFE. TRANSISTOR | BJT | DARLINGTON | NPN | 110V V(BR)CEO | 8A I(C) | TO-220FP
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Continental Device India Limited
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| CDD2061D CDD2061 |
2.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 500 hFE. TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)| TO - 220AB现有
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Continental Device India Limited
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| BD535K BD536J BD534K BD538K BD538J BD534 BD537 |
50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE. 50.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE. ; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:20mA ; Package/Case:3-TO-218X; Current, It av:25A; Gate Trigger Current Max, Igt:80mA Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A ; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA; Holding Current:15mA RoHS Compliant: Yes
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Continental Device India Limited
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| CSC1573R CSC1573AQ |
1.000W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.070A Ic, 100 - 220 hFE. 1.000W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.070A Ic, 60 - 150 hFE.
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Continental Device India Limited
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| 2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS From old datasheet system NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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