| PART |
Description |
Maker |
| 2729-170 |
Pulsed Power S-Band (Si)
|
Microsemi
|
| 1214-700P |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 1214-700P1 |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 2731-20 |
Pulsed Power S-Band (Si)
|
Microsemi
|
| 3134-200P |
Pulsed Power S-Band (Si)
|
Microsemi
|
| HVV1012-100 |
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10楼矛s Pulse, 1% Duty for DME and TCAS Applications
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Applications
|
HVVi Semiconductors, Inc.
|
| PH2729-150M07 PH2729-150M |
S BAND, Si, NPN, RF POWER TRANSISTOR
Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100レs Pulse, 10% Duty
Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100渭s Pulse, 10% Duty
Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty
|
Tyco Electronics
|
| HVV1011-300 HVV1011-300-EK |
L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50μs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications
L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50レs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications
|
HVVi Semiconductors, Inc.
|
| HVV0912-150 HVV0912-150-EK |
L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications
L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10レs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications
|
HVVi Semiconductors, Inc.
|
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| VTU-5192A7A |
Unigrid Pulsed I-J Band Helix TWT Series
|
Communications & Power Industries, Inc.
|
|
