PART |
Description |
Maker |
1214-550P |
Pulsed Power L-Band (Si)
|
Microsemi
|
1014-6A |
Pulsed Power L-Band (Si)
|
Microsemi
|
1214-110M |
Pulsed Power L-Band (Si)
|
Microsemi
|
1214-370V |
Pulsed Power L-Band (Si)
|
Microsemi
|
3134-65M |
Pulsed Power S-Band (Si)
|
Microsemi
|
TAN350 |
350 Watts, 50 Volts, Pulsed Avionics 960 1215 MHz 350瓦,50伏特,脉冲航空电601215兆赫 TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 350; P(in) (W): 70; Gain (dB): 7; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR 350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
|
Electronic Theatre Controls, Inc. Microsemi, Corp. ETC[ETC] List of Unclassifed Manufacturers
|
HVV1011-035 |
L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50楼矛s Pulse, 5% Duty for TCAS and Mode-S Applications L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50μs Pulse, 5% Duty for TCAS and Mode-S Applications
|
HVVi Semiconductors, Inc.
|
HVV1214-100 HVV1214-100-EK |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200渭s Pulse, 10% Duty For Ground Based Radar Applications L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
HVV1012-250 HVV1012-250-EK |
L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10楼矛s Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications
|
HVVi Semiconductors, Inc.
|
|