| PART |
Description |
Maker |
| TGF2023-01-15 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-01 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-2-01 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| CMPA0060002D |
2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier
|
Cree, Inc
|
| SLD-1026Z |
3 Watt Discrete LDMOS Device Plastic Surface Mount Package
|
sirenza.com
|
| QPA1014 |
40 Watt GaN Amplifier
|
TriQuint Semiconductor
|
| MJE800T MJE800 MJE702 MJE703 MJE803 MJE700T MJE700 |
From old datasheet system
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
|
Motorola, Inc.
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| CGH40010 |
10 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| CGH40006P-AMP |
6 W, RF Power GaN HEMT
|
Cree, Inc
|
| GP1001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
|
