| PART |
Description |
Maker |
| SVT15120UB |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER
|
Pan Jit International I...
|
| SVT12120U-16 SVT12120U-R2-00001 |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER
|
Pan Jit International I...
|
| SVT12120UB-16 SVT12120UB-R2-00001 |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER
|
Pan Jit International I...
|
| SVT12120UB |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER
|
Pan Jit International I...
|
| SVT15100U-R2-00001 SVT15100U-16 |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER
|
Pan Jit International I...
|
| BAT60A Q62702-A1188 |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply 硅肖特基二极管（肖特基二极管整流极端VF为移动通信电源供应下降
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IDT71B74S10TP IDT71B74S10Y IDT71B74S12TP IDT71B74S |
M C SWITCH EXTREME 10/100SM 24-VDC SC
M C SWITCH EXTREME 10/100MM 48-VDC ST
M C SWITCH EXTREME 10/100MM 24-VDC ST
M C SWITCH EXTREME 10/100MM 95-260-VAC ST
MC SWITCH STANDARD 10/100MM 115-VAC SC
MC SWITCH EXTREME 10/100 SM ST 12-VDC
BiCMOS STATIC RAM 64K (8K x 8-BIT) CACHE-TAG RAM
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| 46114 46112 46113 45985 |
EXTreme LPHPower Low-Profile Hybrid Power Connector
|
Molex Electronics Ltd.
|
| SPP07N60C309 SPA07N60C3 SPI07N60C3 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP04N60S5 SPP04N60S507 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP15N60C3 SPP15N60C309 SPI15N60C3 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Cool MOS?Power Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
