| PART |
Description |
Maker |
| FDB045AN08A0 FDB045AN08NBSP FDB045AN08 |
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5m?/a>
N-Channel UltraFET ?Trench MOSFET 75V, 80A, 4.5mOhm
From old datasheet system
N-Channel UltraFET® Trench MOSFET
N-Channel UltraFET Trench MOSFET 75V/ 80A/ 4.5m
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mз 19 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
| TPCF8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| UPA502T PA502T G11238EJ1V0DS00 UPA502T-T1 UPA502T- |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
N-CHANNEL MOS FET 5-PIN 2 CIRCUITS
Silicon transistor
|
NEC Corp.
NEC[NEC]
|
| KU047N08P |
N-ch Trench MOS FET
|
Korea Electronics (KEC)
|
| KU310N10P |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KUS086N10F |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU045N10P |
N-ch Trench MOS FET
|
KEC
|
| KU3600N10D |
N-ch Trench MOS FET
|
Korea Electronics (KEC)
|
| KU086N10F KU086N10P |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| TGBR20L60CG-TA3-T |
DUAL TRENCH MOS SCHOTTKY
|
Unisonic Technologies
|
|
