| PART |
Description |
Maker |
| 10N70-Q |
N-CHANNEL POWER MOSFE
|
Unisonic Technologies
|
| IRF640S |
N-CHANNEL 200V - 0.150 OHM -18A TO-263 MESH OVERLAY MOSFET
|
ST Microelectronics
|
| OM6010CSA |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-254AA 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 18A条（丁）|54AA
|
Diodes, Inc.
|
| FDMC8296 |
N-Channel Power Trench? MOSFET 30V, 18A, 8.0mΩ
N-Channel Power Trench㈢ MOSFET 30V, 18A, 8.0mヘ
|
Fairchild Semiconductor
|
| FDMC8678S |
N-Channel Power Trench? SyncFET TM 30V, 18A, 5.2mΩ
N-Channel Power Trench㈢ SyncFET TM 30V, 18A, 5.2mヘ
|
Fairchild Semiconductor
|
| IRL640A |
Power MOSFET - BVdss=200V Rds(on)=0.18 ohn Id = 18A
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF5Y5305CM |
POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.065ohm/ Id=-18A*)
POWER MOSFET P-CHANNEL(Vdss=-55V Rds(on)=0.065ohm Id=-18A*)
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-18A*)
-55V Single P-Channel Hi-Rel MOSFET in a TO-257AA package
|
IRF[International Rectifier]
|
| AP2302AGN-HF |
Advanced Power MOSFE
|
TY Semiconductor Co., Ltd
|
| IRFM220B IRFM220BTFFP001 IRFM220BD84Z |
1.13 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFM220A
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| FQU5P20 FQD5P20 FQD5P20TM |
200V P-Channel QFET
200V P-Channel MOSFET 3.7 A, 200 V, 1.4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRFB42N20D |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=200V/ Rds(on)max=0.055ohm/ Id=44A)
|
International Rectifier
|
