| PART |
Description |
Maker |
| HY64UD16162M |
Mobile PSRAM - 16Mb
|
Hynix Semiconductor
|
| HM658512AI |
4 M PSRAM (512-kword ×8-bit)(4 M PSRAM (512k×8) 4个M移动存储芯片12 KWord的8位）个M移动存储芯片（为512k字8位）
4 M PSRAM (512-kword ?8-bit)(4 M PSRAM (512k瀛??8浣?)
|
Hitachi,Ltd.
|
| KMM53632004BK |
32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1
|
Samsung Semiconductor
|
| MT55L512Y32F MT55V512Y36F MT55L1MY18F MT55V512V36F |
16Mb: 512K x 32，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36锛?low-Through ZBT SRAM(16Mb娴??寮??姝ラ?????ㄥ?)
|
Micron Technology, Inc.
|
| MT55L512Y36P MT55L512Y32P MT55L1MY18P |
16Mb: 512K x 36，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 32，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
|
Micron Technology, Inc.
|
| DVS-355-ZU25E DVS-355-MU25E DVS-355-SU25E DVS-355M |
Embedded/Mobile Digital Video Platform with Intel Core Duo Mobile Processor
|
Advantech Co., Ltd.
|
| HYB18L128160BC-7.5 HYE18L128160BC-7.5 HYB18L128160 |
DRAMs for Mobile Applications 128-Mbit Mobile-RAM
|
Qimonda AG
|
| SST32HF32A1-70-4E-LSE SST32HF32A1-70-4C-LS SST32HF |
Multi-Purpose Flash Plus PSRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PBGA62
Multi-Purpose Flash Plus PSRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PBGA63
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| ID245K01 |
16MB Flash Memory Card
|
SHARP[Sharp Electrionic Components]
|
| HT150RS HT450RB MD821RC MX800RC SFU821RC MX150RS |
450 MHz - 470 MHz MOBILE STATION ANTENNA
821 MHz - 896 MHz MOBILE STATION ANTENNA
806 MHz - 866 MHz MOBILE STATION ANTENNA
150 MHz - 162 MHz MOBILE STATION ANTENNA
|
|
| IS41C16100C |
16Mb DRAM WITH EDO PAGE MODE
|
Integrated Silicon Solution, Inc
|
