| PART |
Description |
Maker |
| 75LQ150 |
HIGH PSRR 150 MA LDO, VIN 10V MAX, VOUT = 6.0V, -40C to 85C, 5-SOT-23, T/R
SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 75 Amp, 150V
75V 150A Hi-Rel Schottky Discrete Diode in a SMD-1 package
|
International Rectifier
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| SS100 SS14 SS13 SS12 SS16 S100 |
Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A.
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
|
PanJit International Inc.
PanJit Semiconductors
Pan Jit International Inc.
|
| BAT14 BAT14-03W |
Silicon Schottky Diode
Schottky Diodes - RF Schottky diode for DBS mixer application to 12GHz
|
Infineon Technologies A...
Infineon Technologies AG
|
| SD103AWS-TP SD103BWS-TP |
DIODE SCHOTTKY 40V 350MA SOD323 0.35 A, 40 V, SILICON, SIGNAL DIODE
400mW Small Signal Schottky Diode 20 to 40 Volts
DIODE SCHOTTKY 30V 350MA SOD323
|
Micro Commercial Components, Corp.
|
| CMSSH-3E CMSSH-3SE CMSSH-3AE CMSSH-3CE |
SMD Schottky Diode Dual: High Current: Common Anode
SMD Schottky Diode Dual: High Current: Common Cathode
SMD Schottky Diode Dual: High Current: In Series
SMD Schottky Diode Single: High Current
ENHANCED SPECIFICATION SURFACE MOUNT, SUPERmini SILICON SCHOTTKY DIODES
|
CENTRAL[Central Semiconductor Corp]
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| TTA150T TTA100Z TTA200S TTA235S TTA235D |
SINGLE BIDIRECTIONAL BREAKOVER DIODE|235V V(BO) MAX|300MA I(S)|TO-220AC
SINGLE BIDIRECTIONAL BREAKOVER DIODE|180V V(BO) MAX|300MA I(S)|PILL-B
SINGLE BIDIRECTIONAL BREAKOVER DIODE|285V V(BO) MAX|300MA I(S)|DO-214AB 单双向击穿二极管| 285V五（公报）最大| 300mA的我（县）|DO - 214AB
SINGLE BIDIRECTIONAL BREAKOVER DIODE|345V V(BO) MAX|300MA I(S)|DO-214AB 单双向击穿二极管|导通五（公报）最大| 300mA的我（县）|DO - 214AB
SINGLE BIDIRECTIONAL BREAKOVER DIODE|345V V(BO) MAX|300MA I(S)|DO-201AD 单双向击穿二极管|导通五（公报）最大| 300mA的我（县）|的DO - 201AD
|
Fairchild Semiconductor, Corp.
Honeywell International, Inc.
Carling Technologies, Inc.
|
| CMPSH-3SE CMPSH-3AE CMPSH-3CE CMPSH-3E |
SMD Schottky Diode Dual: High Current: Common Cathode
SMD Schottky Diode Dual: High Current: In Series
SMD Schottky Diode Single: High Current
SMD Schottky Diode Dual: High Current: Common Anode
ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES
|
CENTRAL[Central Semiconductor Corp]
|
| TPB100RL TPB180RL TPB220RL TPB130RL |
SINGLE BIDIRECTIONAL BREAKOVER DIODE|133V V(BO) MAX|800MA I(S)|AXIAL-10
SINGLE BIDIRECTIONAL BREAKOVER DIODE|240V V(BO) MAX|800MA I(S)|AXIAL-10
SINGLE BIDIRECTIONAL BREAKOVER DIODE|293V V(BO) MAX|800MA I(S)|AXIAL-10 单双向击穿二极管| 293V五（公报）最大| 800mA的我（县）|轴流- 10
SINGLE BIDIRECTIONAL BREAKOVER DIODE|173V V(BO) MAX|800MA I(S)|AXIAL-10 单双向击穿二极管| 173V五（公报）最大| 800mA的我（县）|轴流- 10
|
STMicroelectronics N.V.
International Rectifier, Corp.
|
| BAS40DW-04 BAS40DW-05-TP BAS40DW-06-TP BAS40TW BAS |
200mW SCHOTTKY BARRIER Diode
DIODE SCHOTTKY 200MW 40V SOT363 0.2 A, 40 V, 4 ELEMENT, SILICON, SIGNAL DIODE
DIODE SCHOTTKY ARRAY 40V SOT-363 0.2 A, 40 V, 3 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
| BAT240A |
Silicon Schottky Diode (Rectifier Schottky diode for modem applications High reverse voltage For power supply)
|
SIEMENS A G
SIMENS
Siemens Semiconductor Group
|
