| PART |
Description |
Maker |
| 2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
| 2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
| 2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
| 2SA1182 |
SOT-23 package Collector-base voltage VCBO -35 V
|
TY Semiconductor Co., Ltd
|
| 2SA1588 |
Excellent hFE linearity.Collector-base voltage VCBO -35 V
|
TY Semiconductor Co., Ltd
|
| 2SA1612 |
High DC current gain Collector to base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
| BCX71G |
PNP Epitaxial Silicon Transistor Collector-base voltage VCBO -45 V
|
TY Semiconductor Co., Ltd
|
| 2SA811A |
High DC current gain. Collector-base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
| 2SD1220 |
Power Amplifier Applications Collector-base voltage VCBO 150 V
|
TY Semiconductor Co., Ltd
|
| 2SB1002 |
Low frequency power amplifier Collector to base voltage VCBO -70 V
|
TY Semiconductor Co., Ltd
|
| 2SA1255 |
High voltage. Small package.Collector-base voltage VCBO -200 V
|
TY Semiconductor Co., Ltd
|
