| PART |
Description |
Maker |
| DL-3150-103 |
Infrared Laser Diode Compact Flat Package Type Laser Diode
|
SANYO
|
| APT30DQ60KG |
Fast Recovery Epitaxial Diode; Package: TO-220 [K]; IO (A): 30; VR (V): 600; trr (nsec): 19; VF (V): 2; Qrr (nC): 400; 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-220
|
Microsemi, Corp.
|
| 10ETF02FP 10ETF04FP 10ETF06FP |
200V Fast Recovery Diode in a TO-220 FullPak package
400V Fast Recovery Diode in a TO-220 FullPak package
600V Fast Recovery Diode in a TO-220 FullPak package
|
International Rectifier
|
| SLU301VR-2-01 SLU301VR-1-02 SLU301VR-24-02 SLU301V |
810 nm, LASER DIODE
785 nm, LASER DIODE
807 nm, LASER DIODE
798 nm, LASER DIODE
|
|
| 10ETF12FP 10ETF10FP |
1200V Fast Recovery Diode in a TO-220 FullPak package
1000V Fast Recovery Diode in a TO-220 FullPak package
FAST SOFT RECOVERY RECTIFIER DIODE
|
IRF[International Rectifier]
|
| NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX7563JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7337BF-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
| NX6510GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
