| PART |
Description |
Maker |
| LLL185R70J224MA01 |
LW Reversed Low ESL Chip Multilayer Ceramic Capacitors for General Purpose
|
Murata Manufacturing Co...
|
| M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| C0816X5R0J105M050AC |
Commercial Grade ( Low ESL Reverse Geometry )
|
TDK Electronics
|
| C1220X7R1H103M085AC |
Commercial Grade ( Low ESL Reverse Geometry )
|
TDK Electronics
|
| C1220X7R0J474M085AC |
Commercial Grade ( Low ESL Reverse Geometry )
|
TDK Electronics
|
| M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
| MP2B5038 MP2B5085 MP2B5052 MP2B5150 |
A multi chip power device for a Multi-Oscillated Current Resonant type Converter
|
Fuji Electric
|
| LM39102G-S08-R LM39102G-SH2-R |
Reversed-battery protection
|
Unisonic Technologies
|
| M36L0R7050L1ZAMF M36L0R7060U1 M36L0R7060U1ZAME M36 |
128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package
|
STMicroelectronics
|
| DBCDINM64QA1S2 DBCDINM64QA1S3 DBCDINM64QAB1S2 DBCD |
DIN 41612 TYPE Q (REVERSED) - MALE
|
Dubilier
|
| CE201210-2N2D CE201210-1N8D CE201210-1N5D CE201210 |
Multi-Layer Chip Inductors
MAGNETICS MULTILAYER CHIP INDUCTOR
|
Bourns Electronic Solutions
Bourns, Inc.
|
