| PART |
Description |
Maker |
| C527RT320-0303 C460RT320-0305 C470RT320-0301 C527R |
Reduced Forward Voltage 3.1 V Typical at 20 mA
|
Cree, Inc
|
| C460TR3050-S3600 |
Low Forward Voltage - 2.95 V Typical at 20 mA
|
Cree, Inc
|
| Q62702-G0042 BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MCP6H02 MCP6H01 MCP6H04 |
1.2 MHz, 16V Op Amps Input Offset Voltage: ±0.7 mV (typical)
|
Microchip Technology
|
| SPX2090 |
HIGH VOLTAGE RECTIFIER BRIDGE STACK
|
Solid States Devices, Inc
|
| 2CL40KV0.2A |
0.2A 40kV--High voltage silicon rectifier stack
|
getedz electronics
|
| 2CL100KV-02A |
0.2A 100kV--High voltage silicon rectifier stack
|
getedz electronics
|
| IXDA20N120AS |
IGBT Discretes: NPT IGBT
High Voltage IGBT
|
IXYS
|
| M3500-0916 |
900-1600 MHZ TYPICAL OUPUT FREQUENCY / MODULATION SENSITIVITY VERSUS TUNING VOLTAGE
|
Micronetics, Inc.
|
| M3500-0204 |
200-400 MHZ TYPICAL OUTPUT FREQUENCY / MODULATION SENSITIVITY VERSUS TUNING VOLTAGE
|
Micronetics, Inc.
|
| KTS1C1S250 |
Typical RDS(on) (N-Channel)=0.9 Typical RDS(on) (N-Channel)=2.1 Gate-source zener diode
|
TY Semiconductor Co., Ltd
|
