| PART |
Description |
Maker |
| 20MT120UF 20MT120UFPBF |
40 A, 1200 V, N-CHANNEL IGBT MTP, 18 PIN
UltraFast NPT IGBT
1200V UltraFast 10-30 kHz Full-Bridge IGBT in a MTP package
|
Vishay Semiconductors
IRF[International Rectifier]
|
| 40MT120UH 40MT120UHT |
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a MTP package
HALF-BRIDGE IGBT MTP UltraFast NPT IGBT
|
IRF[International Rectifier]
|
| 25MT060WF |
FULL-BRIDGEIGBTMTP
FULL-BRIDGE IGBT MTP
600V Warp 20-100 kHz Full-Bridge IGBT in a MTP package
|
InternationalRectifier
IRF[International Rectifier]
|
| 20MT120UF |
FULL-BRIDGE IGBT MTP UltraFast NPT IGBT
|
International Rectifier
|
| 19MT050XF |
500V Single N-Channel HEXFET Power MOSFET in a MTP package
FULL BRIDGE FREDFET MTP HEXFET POWER MOSFET
From old datasheet system
|
IRF[International Rectifier]
|
| C67076-A2510-A67 BSM15GD60DN2 SIEMENSAG-BSM15GD60D |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) 15 A, 600 V, N-CHANNEL IGBT
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| VS-25MT060WFAPBF |
IGBT MTP
|
Vishay Siliconix
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| 7MBP10PE120 7MBR10PE120 |
IGBT module (S series)
IGBT Module(Power Integrated Module)
|
FUJI[Fuji Electric]
|
| APTGT50H60T3G |
Full - Bridge Trench Field Stop IGBT Power Module 80 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| APTGT225A170 |
340 A, 1700 V, N-CHANNEL IGBT
Phase leg Trench Field Stop IGBT Power Module
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| APTGT100DU60TG |
Dual common source Trench Field Stop IGBT Power Module 150 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
