| PART |
Description |
Maker |
| RS1G300GN |
Nch 40V 30A Power MOSFET
|
Rohm
|
| R6024KNZ1C9 |
Nch 600V 24A Power MOSFET
|
ROHM
|
| R6035KNZC8 |
Nch 600V 35A Power MOSFET
|
ROHM
|
| R6020ENZ1 |
Nch 600V 20A Power MOSFET
|
Rohm
|
| R6018ANX12 |
Nch 600V 18A Power MOSFET
|
Rohm
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFUC20 IRFRC20 IRFUC20PBF |
600V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.0A)
(IRFRC20 / IRFUC20) Power MOSFET
|
IRF[International Rectifier]
|
| 30ETH06 30ETH06-1 30ETH06S |
Hyperfast Rectifier
600V 30A HyperFast Discrete Diode in a TO-220AC package
600V 30A HyperFast Discrete Diode in a TO-262 package
600V 30A HyperFast Discrete Diode in a D2-Pak (UltraFast) package
|
IRF[International Rectifier]
|
| FS5UM-14A |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 5 A, 700 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc.
Powerex Power Semiconductors
Mitsubishi Electric Corporation
|
| FS70UMH-03 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 70 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
