| PART |
Description |
Maker |
| IXBX75N170 IXBK75N170 |
BiMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH5N160G IXBP5N160G |
High Voltage BIMOSFETTM
Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH42N170A IXBT42N170A |
(IXBH42N170A / IXBT42N170A) BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH9N140G IXBH9N160G |
Discrete IGBTs
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBX55N300 |
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH28N170A |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| TA4018F |
Bipolar Linear Integrated Circuit Silicon Monolithic VHF Gain Control Amplifier Application
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
| STE70IE120 |
Monolithic Emitter Switched Bipolar Transistor ESBT? 1200 V - 70 A - 0.014 Ω Power Module
Monolithic Emitter Switched Bipolar Transistor ESBT 1200V 70A 0.014Ohm Power Module
Monolithic Emitter Switched Bipolar Transistor ESBT㈢ 1200 V - 70 A - 0.014 ヘ Power Module
|
ST Microelectronics, Inc.
STMICROELECTRONICS[STMicroelectronics]
|
| AN7523N |
Silicon Monolithic Bipolar IC
|
Matsudhita
|
| AN17831A |
Silicon Monolithic Bipolar IC / Audio
|
ETC
|
| TA8659AN |
Bipolar Linear Integrated Circuit SIlicon Monolithic
|
Toshiba
|
| TA1360ANG |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
