| PART |
Description |
Maker |
| KMD6D0DN40Q |
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters.
|
KEC(Korea Electronics)
|
| XC3S200A-4VQG100C TQG144 XC3S50A XC3S200A-4FTG256C |
Architectural and Configuration Overview
Spartan-3A FPGA Family
DC Electrical Characteristics
DC and Switching Characteristics
|
Xilinx, Inc
|
| SL1020002-A SL1020002-B |
TRANS,WALL,12VAC/1A,F,2.1MMX 5.5MM,UL/CSA 60/C
TRANS,WALL,12VAC/1000mA 3.5mm,UL/CSA 75/CS 电路保护热敏电阻
|
Ametherm, Inc.
|
| HGTP14N37G3VL HGT1S14N37G3VLS HGT1S14N37G3VLS9A |
TRANS IGBT CHIP N-CH 380V 25A 3TO-263AB
14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs
TRANS PNP BIPOLAR 45V SOT323
TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB
TRANSISTOR PNP BIPOLAR 45V SOT23
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| BDY23A BDY25A BDY25B BDY25C |
Trans GP BJT NPN 60V 6A 3-Pin(2 Tab) TO-3
Trans GP BJT NPN 140V 6A 3-Pin(2 Tab) TO-3
|
New Jersey Semiconductor
|
| OM200F120CMD |
ELECTRICAL CHARACTERISTICS: OM200F120CMD (Tc= 25 C unless otherwise specified)
ELECTRICAL CHARACTERISTICS: OM200F120CMD (Tc= 25 C unless otherwise specified)
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| M48T37YMH M48T37Y-70MH1TR M48T37Y-70MH6 M48T37Y-70 |
TRANS PREBIASED DUAL NPN SOT363
TRANS PREBIASED DUAL COMP SOT363
TRANS PREBIAS DUAL COMP SOT-563
TRANS PREBIASED DUAL PNP SOT-363
DIODE ZENER SINGLE 150mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-523 3K/REEL
DIODE ZENER DUAL ISOLATED 200mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-363 3K/REEL
3.3V-5V 256 Kbit 32Kb x8 TIMEKEEPER SRAM 3.3 - 5V56千位2KB的SRAM x8计时
DIODE ZENER SINGLE 300mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-23 3K/REEL 3.3 - 5V56千位2KB的SRAM x8计时
DIODE ZENER DUAL ISOLATED 200mW 3.3Vz 5mA-Izt 0.0606 5uA-Ir 1 SOT-363 3K/REEL 3.3 - 5V56千位32KB的SRAM x8计时
|
意法半导
ST Microelectronics
STMicroelectronics N.V.
|
| 2N3502 2N3504 |
Trans GP BJT PNP 45V 3-Pin TO-39
Trans GP BJT PNP 45V 3-Pin TO-18 Box
|
New Jersey Semiconductor
|
| RD10JS RD11JS RD12JS RD13JS RD15JS RD16JS RD18JS R |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode
8.2 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34
surface mount silicon Zener diodes 表面贴装硅稳压二极管
DO-34 Package Low noise/ Sharp Breakdown characteristics 400 mW Zener Diode
DO-34 Package Low noise Sharp Breakdown characteristics 400 mW Zener Diode
Constant Voltage diode 400mW DO-34
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| SL1510006-03-B SL1510006-03-A |
TRANS,WALL,REG LIN,24VDC/500mA 2.5mm X 5.5mm,CTR POS,UL/CSA
TRANS,WALL,REG LIN,24VDC/500mA 2.1mm X 5.5mm,F2,UL/CSA
|
Ametherm, Inc
|
| P-5016 P-6134 P-6467 P-6456 P-6138 P-6466 P-6469 P |
POWER TRANS FORMERS
|
List of Unclassifed Man...
|
