| PART |
Description |
Maker |
| XTSC0402-470PF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| HTSC0402-10NF-11V |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| AT549RBT |
Extreme Temperature Coil
|
Coilcraft lnc.
|
| IDT71B74S10TP IDT71B74S10Y IDT71B74S12TP IDT71B74S |
M C SWITCH EXTREME 10/100SM 24-VDC SC
M C SWITCH EXTREME 10/100MM 48-VDC ST
M C SWITCH EXTREME 10/100MM 24-VDC ST
M C SWITCH EXTREME 10/100MM 95-260-VAC ST
MC SWITCH STANDARD 10/100MM 115-VAC SC
MC SWITCH EXTREME 10/100 SM ST 12-VDC
BiCMOS STATIC RAM 64K (8K x 8-BIT) CACHE-TAG RAM
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| MPXA6115A MPXH6115A |
MPXA6115A High Temperature Accuracy Integrated Silicon Pressure Sensor for Manifold Absolute Pressure, Altimeter or Barometer Applications On-Chip Signal Conditioned, Temperature Compensated and Calibrated
High Temperature Accuracy Integrated Silicon Pressure Sensor for Measuring Absolute Pressure
|
Motorola
|
| CD6274CA CD6275 CD6302CA 1.5KCD6.8C CD6272CA CD628 |
Low Capacitance, 16 - Channel ±15 V/12 V iCMOS™ Multiplexer; Package: LFCSP (5x5x.85mm) w/2.7exposed pad; No of Pins: 32; Temperature Range: TBD 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
Low Capacitance, 16 - Channel ±15 V/12 V iCMOS™ Multiplexer; Package: TSSOP (4.4mm); No of Pins: 28; Temperature Range: TBD 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
0.5 Ω CMOS 1.65 V TO 3.6 V 4-Channel Multiplexer; Package: MSOP; No of Pins: 10; Temperature Range: Automotive 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
CELLULAR DIE PACKAGE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
480 MHz, Single Supply, Triple 2:1, Buffered (G= 2) Multiplexer; Package: EVALUATION BOARDS; No of Pins: -; Temperature Range: Industrial 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
16-Channel Multiplexer (Superior DG506A Replacement); Package: PLCC; No of Pins: 28; Temperature Range: Commercial 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
5 Ω Max Ron, 4 - /8 - Channel ±15 V /12 V /± 5 V Multiplexers; Package: LFCSP (4x4mm, 2.50mm exposed pad); No of Pins: 16; Temperature Range: Industrial 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
CMOS Low Voltage, 3 O 4-Channel Multiplexer; Package: TSSOP; No of Pins: 16; Temperature Range: Industrial 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
0.28 O CMOS 1.65 V to 3.6 V Single SPST Switches in SC70 Open for a Logic 1 Input; Package: SC70; No of Pins: 6; Temperature Range: Industrial 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
Low Capacitance, 8-Channel, ±15 V/ 12 V iCMOS® Multiplexer; Package: TSSOP; No of Pins: 16; Temperature Range: Commercial 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Low Capacitance, 8-Channel, ±15 V/ 12 V iCMOS® Multiplexer; Package: LFCSP (4x4x.85mm, 2.10mm exposed pad); No of Pins: 16; Temperature Range: TBD 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
Low Capacitance, 4-Channel, ±15 V/ 12 V iCMOS™ Multiplexer; Package: TSSOP; No of Pins: 16; Temperature Range: TBD 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
4 Channel Buffered, 250 MHz, 10 ns Switching Multiplexer w/Amplifier; Package: SOIC; No of Pins: 14; Temperature Range: Industrial
|
Microsemi, Corp.
MICROSEMI CORP-SCOTTSDALE
|
| BCR400W Q62702-C2481 |
From old datasheet system
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation)
ECONOLINE: REZ - Cost Effective- 1kVDC & 2kVDC Isolation- Custom Solutions Available- No Extern. Components Required- UL94V-0 Package Material- Efficiency to 85%
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| MPX2202GP MPX2202ASX MPX2202D MPX2202DP MPX2202AP |
200kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors(200kPa片内温度补偿和校准硅压力传感
200kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors(200kPa???娓╁害琛ュ??????????浼????
|
飞思卡尔半导体(中国)有限公司
椋???″????浣?涓??)??????
|
| KTY83/120 KTY83/110 KTY83/121 |
Silicon temperature sensors
|
Philips
|
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