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XTSC0402-22NF - Extreme Temperature Silicon Capacitor

XTSC0402-22NF_9060452.PDF Datasheet


 Full text search : Extreme Temperature Silicon Capacitor
 Product Description search : Extreme Temperature Silicon Capacitor


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XTSC0402-470PF Extreme Temperature Silicon Capacitor
Micross Components
KTY84-152 KTY84-151 KTY84-150 KTY84-130 KTY84-1 KT Silicon temperature sensors SPECIALTY ANALOG CIRCUIT
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MPXA6115A MPXH6115A MPXA6115A High Temperature Accuracy Integrated Silicon Pressure Sensor for Manifold Absolute Pressure, Altimeter or Barometer Applications On-Chip Signal Conditioned, Temperature Compensated and Calibrated
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JANTXV1N827ATR-2 JANS1N827ATR-2 JANTXV1N827TR-2 JA 6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
Microsemi, Corp.
Microsemi Corporation
BAT60A Q62702-A1188 Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply 硅肖特基二极管(肖特基二极管整流极端VF为移动通信电源供应下降
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
ASM121Q3 ASM121 SIMISTOR TEMPERATURE SENSOR ULTRA-LOW-POWER SILICON THERMISTOR
SIMISTOR⑩ TEMPERATURE SENSOR ULTRA-LOW-POWER SILICON THERMISTOR
List of Unclassifed Manufacturers
ETC[ETC]
CR80-040 CR150-100 CR80-020LEADFREE CENTRALSEMICON 2.5V to 5.5V, 230µA Dual Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 24-lead TSSOP 80 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
150 A, 1000 V, SILICON, RECTIFIER DIODE, DO-8
80 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 600 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-5
True Bipolar Input, Dual 12-Bit, 2-Channel, Simultaneous Sampling SAR ADC; Package: TSSOP; No of Pins: 24; Temperature Range: Industrial
80 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
CREE POWER
KTY85-1 KTY85-110 KTY85-120 KTY85-121 KTY85-122 KT Silicon temperature sensors
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
KTY82-152 KTY82-151 KTY82-150 KTY82-122 KTY82-121 Silicon temperature sensors
PHILIPS[Philips Semiconductors]
KTY10-62E6746 KTY10-62E6764 Silicon Temperature Sensor
Infineon
 
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