| PART |
Description |
Maker |
| T2G6000528-Q3-15 T2G6000528-Q3-EVB5 T2G6000528-Q3- |
10W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| STK401-010 STK400-010 STK401-210 STK400-100 STK400 |
3ch AF Power Amplifier(Split Power Supply) 10W 10W 10W,THD=0.4% 3通道自动对焦功率放大器（斯普利特电源0W0W的功0W，总谐波失真\u003d 0.4
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
ETC
SANYO[Sanyo Semicon Device]
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| RFRX1702 |
GaAs MMIC IQ Downconverter 17.7GHz to 19.7GHz
|
RF Micro Devices
|
| TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Semiconductor
|
| BD5426EFS |
10W 10W Class-D Speaker Amplifier for Analog Input
|
Rohm
|
| SZM-2066Z SZM2066Z SZM2066ZPCK-EVB2 SZM2066ZPCK-EV |
2.4GHz to 2.7GHz 2W POWER AMPLIFIER
|
RF Micro Devices
|
| RF5602 |
3GHz To 2.7GHz Linear Power Amplifier
|
RF Micro Devices
|
| EIA1718-2P |
17.7-18.7GHz, Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1718-1P |
17.7-18.7GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1011-4P EIB1011-4P |
10.7-11.7GHz, 4W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
