| PART |
Description |
Maker |
| TGA2237-15 |
0.03 2.5GHz 10W GaN Power Amplifier
|
TriQuint Semiconductor
|
| RF3930D |
10W GaN on SiC Power Amplifier Die
|
RF Micro Devices
|
| MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BD5426EFS |
10W 10W Class-D Speaker Amplifier for Analog Input
|
Rohm
|
| TDA7269SA |
10W+10W STEREO AMPLIFIER WITH MUTE & ST-BY
|
STMicroelectronics
|
| SZM-2166Z SZM-2166Z-EVB1 SZM-2166Z-EVB2 SZM-2166Z- |
2.3-2.7GHz 2W Power Amplifier
|
SIRENZA MICRODEVICES
|
| EIA1011-4P |
10.7-11.7GHz 4W Internally Matched Power FET
|
Excelics Semiconductor
|
| RF5652PCK-411 |
5.0V, 2.4GHz TO 2.7GHz HIGH POWER AMPLIFIER
|
RF Micro Devices
|
| EIA1718-2P |
17.7-18.7GHz, Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| RF5602WB33PCK-410 RF5602HWLPCK-410 RF5602SR RF5602 |
3.0V TO 5.0V, 2.3GHz TO 2.7GHz LINEAR POWER AMPLIFIER
|
RF Micro Devices
|
| EIB1718-2P |
17.7-18.7GHz, 2W internally matched power FET
|
Excelics Semiconductor
|
