| PART |
Description |
Maker |
| Q62702-D1288 BAT15-020S BAT15-050S BAT15-090S BAT1 |
RESISTOR,SMD1206,1.1K,1/4W,5% SILICON, LOW BARRIER SCHOTTKY, KA BAND, MIXER DIODE
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SBLF10L25 SBL10L25 SBLB10L25 |
Low VF Schottky Barrier Rectifier Reverse Voltage 25V Forward Current 10A
Low VF Schottky Barrier Rectifier VF肖特基整流器
|
VISAY[Vishay Siliconix]
Vishay Intertechnology, Inc.
|
| U10FWJ2C48M 10FWJ2C48M |
SCHOTTKY BARRIER RECTIFIER STACK (LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| MMBD452LT1G |
Dual Hot−Carrier Diodes Schottky Barrier Diodes SILICON, LOW BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
| KDR411 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW PWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
| KDR367 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR368E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 6A8-G 6A05-G 6A10-G 6A1-G 6A2-G 6A4-G 6A6-G |
General Purpose Rectif
|
Comchip Technology Co., Ltd.
COMCHIP[Comchip Technology]
|
| ASI5082-2794 5082-2794 |
SCHOTTKY LOW BARRIER DIODE SILICON, LOW BARRIER SCHOTTKY, MIXER DIODE
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| CDBB1100LR-HF CDBB1150LR-HF CDBB1200LR-HF CDBB140L |
Halogen Free Low VF Schottky Barrier, V-RRM=100V, V-R=100V, I-O=1A
Halogen Free Low VF Schottky Barrier, V-RRM=150V, V-R=150V, I-O=1A
Halogen Free Low VF Schottky Barrier, V-RRM=200V, V-R=200V, I-O=1A
Halogen Free Low VF Schottky Barrier, V-RRM=40V, V-R=40V, I-O=1A
Halogen Free Low VF Schottky Barrier, V-RRM=60V, V-R=60V, I-O=1A
|
Comchip Technology
|
| KDR322 |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
Schottky Barrier Diode
|
KEC[KEC(Korea Electronics)]
Korea Electronics (KEC)
|
| MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
