PART |
Description |
Maker |
CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构(2.5周期读写延迟 18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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M36P0R9070E0_06 M36P0R9070E0 M36P0R9070E0ZAC M36P0 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
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STMICROELECTRONICS[STMicroelectronics]
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CY7C1561V18-333BZC CY7C1561V18-333BZI CY7C1563V18 |
72-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 72-Mbit QDR?II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
CY7C1543V18 CY7C1543V18-300BZC CY7C1543V18-300BZI |
72-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 72-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
AM29BDS643GT5KVAI AM29BDS643GT7KVAI AM29BDS643GT5G |
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 64兆位个M x 16位)的CMOS 1.8伏,只有同时写,突发模式闪存
|
Spansion Inc. Spansion, Inc. SPANSION LLC
|
CY7C1176V18-333BZXC CY7C1176V18-333BZXI CY7C1165V1 |
18-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18-Mbit QDR?II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
CY7C1241V18-300BZXC CY7C1256V18 CY7C1256V18-300BZC |
36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR??II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
S71NS-N |
MirrorBit? 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory MirrorBit㈢ 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory
|
SPANSION
|
CY7C1263XV18 CY7C1265XV18-633BZXC CY7C1263XV18-600 |
36-Mbit QDR? II Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) 36-Mbit QDRII Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
P32P4910A P32P4910 |
PRML Read Channel with PR4, 8/9 ENDEC, 4-Burst Servo
|
PHILIPS[Philips Semiconductors]
|
CY7C1557V18-300BZI CY7C1557V18-300BZXC CY7C1557V18 |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
CY7C1170KV18-550BZC CY7C1168KV18-400BZXC CY7C1168K |
18-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
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