| PART |
Description |
Maker |
| ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 |
Synchronous DRAM(4M X 8 Bit X 4 Banks)
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行
133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
|
ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
|
| A623308AV-70SF A623308AV-70SIF A7623L-S08-T A62330 |
2×75?/a> DRIVER IC WITH 3 INTERNAL CIRCUITS
2×75 DRIVER IC WITH 3 INTERNAL CIRCUITS
2】75з DRIVER IC WITH 3 INTERNAL CIRCUITS
25з DRIVER IC WITH 3 INTERNAL CIRCUITS
8K X 8 BIT CMOS SRAM 8K的8位CMOS的SRAM
|
UTC[Unisonic Technologies]
AMICC[AMIC Technology]
友顺科技股份有限公司
AMIC Technology Corporation
AMIC Technology, Corp.
|
| MT46H16M16LFBF-6ITH MT46H8M32LGB5-75ITA |
Mobile DDR SDRAM MT46H16M16LF ?4 Meg x 16 x 4 banks MT46H8M32LF/LG ?2 Meg x 32 x 4 banks
8M X 32 DDR DRAM, 6 ns, PBGA90
|
Micron Technology
|
| W9864G6GH-5 W9864G6GH-7S W9864G6GH-6 W9864G6GH-6I |
1M × 4 BANKS × 16 BITS SDRAM
1M 4 BANKS 16 BITS SDRAM 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO54
|
Winbond Electronics Corp
http://
Winbond Electronics, Corp.
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 72SD3232RPFE 72SD3232RPFI 72SD3232RPFK 72SD3232RPF |
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 32M X 32 SYNCHRONOUS DRAM, 6 ns, DFP72
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 1千兆位SDRAM2梅格× 32位4，银
|
http://
Maxwell Technologies, Inc
|
| K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W986432AH W986432AHA1 |
512K x 4 BANKS x 32 BITS SDRAM
512K x 4 BANKS x 32 BITS SDRAM
From old datasheet system
|
Winbond Electronics
WINBOND[Winbond]
|
| BA7622 BA7622F A5800990 |
75з driver IC with 3 internal circuits
From old datasheet system
75 driver IC with 3 internal circuits
|
ROHM[Rohm]
|
| BA7623F BA7623 A5800991 |
Multimedia LSIs > Multimedia video > 75ohms driver
75 driver IC with 3 internal circuits
From old datasheet system
75з driver IC with 3 internal circuits
|
ROHM[Rohm]
|
