| PART |
Description |
Maker |
| VF60100C |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| VB40100CHM3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| VB20100C-M3 VB20100CHM3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| Q67040S4721 Q67040S4723 Q67040S4725 IGW50N60T IGB5 |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| VFT2045CBP |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| VFT3080S-M3-4W |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| TSF20U45C TSF20U60C |
Trench MOS Barrier Schottky Rectifier
|
Taiwan Semiconductor Company, Ltd
|
| 5L100-DO-201AD |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|
| VT1045CBP-15 |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V10WM100-M3I |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
