| PART |
Description |
Maker |
| ZXM61P02F ZXM61P02FTA |
20V P-CHANNEL ENHANCEMENT MODE MOSFET Fast switching speed
|
TY Semiconductor Co., Ltd
TY Semiconductor Co., L...
|
| QM2417Y1 |
P-Ch 20V Fast Switching MOSFETs
|
uPI Group Inc.
|
| SI7404DN |
N-Channel 30-V (D-S) Fast-Switching MOSFET N通道30V（D-S）快速开关MOSFET
N-Channel 30-V (D-S) Fast Switching MOSFET
From old datasheet system
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| CDSV3-204-G CDSV3-204-G12 |
Switching Diodes Array, V-RRM=20V, V-R=20V, P-D=200mW, I-F=100mA
Small Signal Switching Diodes
|
Comchip Technology
|
| IRF7601 IRF7601TR |
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Power MOSFET(Vdss=20V, Rds(on)=0.035ohm)
Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) N沟道HEXFET功率MOSFET的（不适用沟道的HEXFET功率马鞍山场效应管）
N-Channel HEXFET Power MOSFET(N娌?? HEXFET ???MOS?烘?搴??)
|
International Rectifier, Corp.
|
| CPH3356-TL-H CPH3356 |
P-Channel Power MOSFET, -20V, -2.5A, 137mOhm, Single CPH3
General-Purpose Switching Device Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| EMH130712 ENA1715A EMH1307 |
P-Channel Power MOSFET, -20V, -6.5A, 26mOhm, Single EMH8
General-Purpose Switching Device Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| SF100CB100 |
From old datasheet system
Isolated power MOSFET module designed for fast switching applications of high voltage and current with a fast recovery diode
|
SANREX[SanRex Corporation]
|
| IRL5NJ7404 2281 |
-20V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
HEXFET? POWER MOSFET
From old datasheet system
HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 20V, P-CHANNEL
|
IRF[International Rectifier]
|
| IRF7534D1 IRF7534D1TR |
-20V FETKY - MOSFET and Schottky Diode in a Micro 8 package
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V)
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
|
IRF[International Rectifier]
|
| IRF7459 IRF7459TR |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=12A) 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 12A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
