| PART |
Description |
Maker |
| NESG210719 NESG210719-T1 |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
NEC[NEC]
|
| MSG43004 |
SiGe HBT type For low-noise RF amplifier
|
Panasonic Semiconductor
|
| MSG43001 |
SiGe HBT type For low-noise RF amplifier
|
Panasonic Semiconductor
|
| MSG33002 |
SIGE HBT TYPE FOR LOW-NOISE RF AMPLIFIER
|
http://
|
| SGB-2233 |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK High Reliability SiGe HBT Technology
|
RF Micro Devices
|
| HMC548LP309 |
SiGe HBT MMIC LOW NOISE AMPLIFIER, 1.2 - 3.0 GHz
|
Hittite Microwave Corporation
|
| NESG2021M16-T3 NESG2021M16-T3-A NESG2021M16 NESG20 |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| 2SC5761 2SC5761-T2 |
NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
|
NEC[NEC]
|
| HMC479ST89E HMC479ST8910 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz
|
Hittite Microwave Corporation
|
| HMC478MP86 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz
|
Hittite Microwave Corporation
|
