| PART |
Description |
Maker |
| LSIC2SD120C10 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
Littelfuse
|
| LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
| NXPSC06650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| CPMF-1200-S080B |
Silicon Carbide MOSFET
|
CREE
|
| GC2X50MPS06-227 |
Silicon Carbide Schottky Diode
|
GeneSiC Semiconductor, ...
|
| SIDC05D60SIC3 |
Silicon Carbide Schottky Diode
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SDP04S6008 SDT04S60 SDD04S60 |
Silicon Carbide Schottky Diode
|
Infineon Technologies AG
Infineon Technologies A...
|
| GA20SICP12-263-15 |
OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
