Part Number Hot Search : 
XMXXX CH751WPT ECCM1 AK6514C CSD667 ADM14 420LE35 MIC7221
Product Description
Full Text Search

DFE201610P-1R0M - Rated current (Isat) is specified when the decrease of the initial inductance value at 30%

DFE201610P-1R0M_9044730.PDF Datasheet
 Full text search : Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
 Product Description search : Rated current (Isat) is specified when the decrease of the initial inductance value at 30%

 Related Part Number
PART Description Maker
1277AS-H-1R0M 1277AS-H-1R0M-18 Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
 Murata Manufacturing Co...
DFE201610P-2R2M DFE201610P-2R2M-18 Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
 Murata Manufacturing Co...
1239AS-H-1R5M 1239AS-H-1R5M-18 Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
 Murata Manufacturing Co...
DFE201210S-1R0M Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
 Murata Manufacturing Co...
IN08006 Isat is the current at which the inductance drops by 15%.
 ice Components, Ins.
C62122-A132-B91 B84111-A-A10 B84111-A-A110 B84111- SIFI-A for normal insertion loss Rated voltage 250 V~, 50/60 Hz Rated current 1 A to 20 A
 EPCOS[EPCOS]
B82476-A1684-M B82476-A1103-M B82476-A1104-M B8247 INDUCTOR 100UH 1200MA
Rated inductance 10 to 1000 mH Rated current 300 to 3800 mA
 EPCOS[EPCOS]
B82432-A1152-K B82432-A1182-K B82432-A1472-K B8243 Size 1812 (EIA) or 4532 (IEC) Rated inductance 1,0 to 1000 mH Rated current 55 to 600 mA
 EPCOS
B82432-T Size 1812 (EIA) or 4532 (IEC) Rated inductance 1,0 to 1000 mH Rated current 60 to 1300 mA
 EPCOS[EPCOS]
B84115-E-A60 B84115-E-K60 B84115-E-A110 B84115-E-A SIFI-E for high insertion loss Rated voltage 250 V~, 50/60 Hz Rated current 3 A to 10 A 推出SIFI -高插入额定电50失去位置0/60赫兹额定电流3 A0
 EPCOS AG
 
 Related keyword From Full Text Search System
DFE201610P-1R0M inductors DFE201610P-1R0M application DFE201610P-1R0M diode DFE201610P-1R0M vcc DFE201610P-1R0M voltage
DFE201610P-1R0M semicon DFE201610P-1R0M Collector DFE201610P-1R0M configuration DFE201610P-1R0M toshiba DFE201610P-1R0M Nation
 

 

Price & Availability of DFE201610P-1R0M

All Rights Reserved © IC-ON-LINE 2003 - 2022  
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]
 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.46517491340637