| PART |
Description |
Maker |
| SBA520AF-17 SBA520AF-R1-00001 SBA520AF-R2-00001 |
EXTREME LOW VF SCHOTTKY RECTIFIER
|
Pan Jit International I...
|
| SVM860U-16 SVM860U-R2-00001 |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER
|
Pan Jit International I...
|
| SVM860UB-R2-00001 SVM860UB-16 |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER
|
Pan Jit International I...
|
| SBT10100UCT |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER
|
Pan Jit International I...
|
| BAT60A Q62702-A1188 |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply 硅肖特基二极管（肖特基二极管整流极端VF为移动通信电源供应下降
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SBT3100XSS-AY-00001 SBT3100XSS-B0-00001 SBT3100XSS |
EXTREME LOW VF SCHOTTKY RECTIFIER
|
Pan Jit International I...
|
| SBT20100UFCT |
Extreme low forward voltage drop, low power losses
|
Pan Jit International I...
|
| Q62702-D1288 BAT15-020S BAT15-050S BAT15-090S BAT1 |
RESISTOR,SMD1206,1.1K,1/4W,5% SILICON, LOW BARRIER SCHOTTKY, KA BAND, MIXER DIODE
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SPP04N60C3 SPA04N60C3 SPP04N60C309 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| BAT62-02L BAT62-02W BAT62-08S BAT62-07W BAT62-03W |
Latest Silicon Discretes - Schottky Diode for power leveling
Schottky Diodes - Low barrier silicon RF Schottky diode for detectors
Schottky Diodes - Low barrier silicon RF Schottky diode array
|
Infineon
|
| CDBURT0230LL-HF |
Halogen Free Low VF Schottky Barrier, V-RRM=30V, V-R=20V, I-O=0.2A
Low Profile SMD Schottky Barrier Diode
|
Comchip Technology
|
