| PART |
Description |
Maker |
| MUX08EP MUX08FP |
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected) 8-CHANNEL, SGL ENDED MULTIPLEXER, PDIP16
|
Analog Devices, Inc.
|
| 308CL-02500-A-200 310CL-02500-A-200 308CL-01500-A- |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
HEATSINK 0.9C/W
HEATSINK 1.7C/W
|
散热
|
| ITZ08F12P ITZ08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-247
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 16A条一（c）| TO - 220AB现有
|
Microsemi, Corp.
|
| PT2270 PT2270-L2-S PT2270-L2 PT2270-L3 PT2270-L3-S |
HEATSINK CPU 28MM SQBLK W/O TAPE
HEATSINK CPU 28MM SQ BLK W/TAPE
Remote Control Decoder 遥控解码
|
http://
Princeton Technology Corporation
Princeton Technology, Corp.
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| Q62702-D930 BD487 BD488 Q62702-D929 Q62702-C825 SI |
PNP SILICON PLANAR TRANSISTORS
NPN Silicon Darlington Transistor (High current gain High collector current)
ECONOLINE: RI - Custom Solutions Available- 1kVDC Isolation- No Extern. Components Required- UL94V-0 Package Material- No Heatsink Required- Efficiency to 87%
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| CG3310 ECG3323 ECG3312 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-247VAR
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 8A I(C) | TO-247VAR
|
|
| DF100R12KF-A FD150R12KF-K |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 100A I(C) | M:HL093HW048 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 100A一（c）|米：HL093HW048
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 150A I(C) | M:HL093HW048 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 150A一（c）|米：HL093HW048
|
Atmel, Corp.
Air Cost Control
|
| E3460M1EN1S E3460N1EN1S E3460Q1EN1S E3460Y1EB1S E3 |
Single Phase Bridge 单相
Silicon Power Rectifier Assemblies Plate Heatsink SILICON, VOLTAGE MULTIPLIER DIODE
Silicon Power Rectifier Assemblies Plate Heatsink SILICON, RECTIFIER DIODE
Silicon Power Rectifier Assemblies Plate Heatsink SILICON, BRIDGE RECTIFIER DIODE
Silicon Power Rectifier Assemblies Plate Heatsink 3 PHASE, SILICON, BRIDGE RECTIFIER DIODE
3 Phase Bridge
Silicon Power Rectifier Assemblies Plate Heatsink
|
MICROSEMI CORP-COLORADO
Cornell Dubilier Electronics, Inc.
Microsemi, Corp.
http://
MICROSEMI[Microsemi Corporation]
|
| WF210000 |
HEATSINK
|
celduc-relais
|
| WF031200 |
HEATSINK
|
celduc-relais
|
| WF131100 |
HEATSINK
|
celduc-relais
|
