| PART |
Description |
Maker |
| GR160MT12K |
Silicon Carbide Power MOSFET
|
GeneSiC Semiconductor, ...
|
| C2M0080120D |
Silicon Carbide Power MOSFET
|
Cree
|
| C2M1000170D-15 |
Silicon Carbide Power MOSFET
|
Cree, Inc
|
| C3M0280090J |
Silicon Carbide Power MOSFET
|
Cree, Inc
|
| C2M0045170D |
Silicon Carbide Power MOSFET C2MTM MOSFET Technology
|
Cree, Inc
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| SDB06S60 SDT06S60 SDP06S60 SDB06S60SMD |
Silicon Carbide Schottky Diodes - 6A diode in TO220-2 package
600V Silicon Carbide Ultrafast Schottky Diode
Silicon Carbide Schottky Diodes - 6A diode in TO220-3 package
Silicon Carbide Schottky Diodes - 6A diode in TO263 package
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SML100M12MSF |
NORMALLY-OFF SILICON CARBIDE POWER JFET
|
Seme LAB
|
| GC2X10MPS12-247 |
Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| GAP3SHT33-CAU-15 |
Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
|
