| PART |
Description |
Maker |
| ATS45C ATS45CS3 |
LOW-VOLTAGE ULTRA-LOW-POWER TEMPERATURE SENSOR WITH HIGH OUTPUT DRIVE
|
ETC
|
| ASM121Q3 ASM121 |
SIMISTOR TEMPERATURE SENSOR ULTRA-LOW-POWER SILICON THERMISTOR
SIMISTOR⑩ TEMPERATURE SENSOR ULTRA-LOW-POWER SILICON THERMISTOR
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| 4305 4306 4300 4301 4303 4304 4307 4302 4309 4308 |
Logic IC
Remote Temperature Switches with Integrated Fan Controller/Driver
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
7-Channel Precision Temperature Monitor 逻辑IC
|
3M Company
|
| C4540H273KHGWCT050 |
Ceramic, 200C, 200C-(CxxxxH), 0.027 uF, 10%, 1,500 V, 4540, C0G, SMD, MLCC, High Temperature, Pulse Discharge, Ultra-Stable, Low Loss
|
Kemet Corporation
|
| ATS20 |
LOW-VOLTAGE ULTRA-LOW-POWER TEMPERATURE SENSOR
|
Andiglog
|
| 157AVG063MGBJ 397AVG035MGBJ 126AVG160MGBJ 337AVG01 |
Small Size - High Temperature ?Low ESR ?High Ripple Current ?Stable with Temperature ?High Frequency
|
Illinois Capacitor, Inc...
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| MAX6126A21 MAX6126-10 MAX6126AASA21 |
Ultra-High-Precision, Ultra-Low-Noise, Series Voltage Reference
|
Maxim Integrated Products
Maxim Integrated Produc...
|
| CX11LHG |
High Shock, Ultra Low Profile, Ultra-Miniature AT Quartz Crystal
|
STATEK CORPORATION
|
| MAX6126-12 |
Ultra-High-Precision, Ultra-Low-Noise, Series Voltage Reference
|
Maxim Integrated Produc...
|
| TG110-E050N5 TG110-E055N5 TG110-E120N5 TG110-E125N |
Extended Temperature Range, E-Ultra?/a> 10/100BASE-TX SOIC-16 Magnetic Modules
Extended Temperature Range, E-Ultra⑩ 10/100BASE-TX SOIC-16 Magnetic Modules
Extended Temperature Range, E-Ultra 10/100BASE-TX SOIC-16 Magnetic Modules
Extended Temperature Range/ E-Ultra 10/100BASE-TX SOIC-16 Magnetic Modules
DIODE ZENER DUAL ISOLATED 200mW 16Vz 7.8mA-Izt 0.05 0.1uA-Ir 12 SOT-363 3K/REEL
Extended Temperature Range, E-Ultra10/100BASE-TX SOIC-16 Magnetic Modules
|
List of Unclassifed Manufacturers
ETC[ETC]
N.A.
Electronic Theatre Controls, Inc.
|
| MAX8510 MAX8510EXKXY-T MAX8511EXKXY-T MAX8512EXK-T |
Voltage Regulator - Datasheet Reference
" Ultra-Low- Noise, High PSRR, Low-Dropout,120mA Linear Regulators in SC70"
Ultra-Low-Noise, High PSRR, Low-Dropout,120mA Linear Regulators in SC70
Ultra-Low-Noise / High PSRR / Low-Dropout /120mA Linear Regulators in SC70
|
MAXIM - Dallas Semiconductor
Maxim Integrated Products Inc
|
|
