| PART |
Description |
Maker |
| FT312D-32L1C FT312D-32Q1C |
Future Technology Devices International Ltd.
|
List of Unclassifed Manufacturers
|
| USB-COM422 |
Future Technology Devices International Ltd
|
List of Unclassifed Manufac...
|
| FT245RQ-REEL FT245RL-REEL |
Future Technology Devices International Ltd. FT245R USB FIFO IC
|
List of Unclassifed Man...
Future Technology Devic...
|
| VNC1L-1A-TRAY VNC1L-1A-REEL |
Vinculum VNC1L Embedded USB Host Controller IC
Future Technology Devices International Ltd.
|
Future Technology Devices International Ltd.
|
| USB-RS232-PCB |
Future Technology Devices International Ltd USB to RS232 UART Serial Converter PCB Datasheet
|
List of Unclassifed Man...
|
| 2FB-XX-M-ST-XXXX |
FUTURE BUS SIGNAL
|
Adam Technologies, Inc.
|
| 2FB-XX-F-353 |
FUTURE BUS CONNECTOR
|
Adam Technologies, Inc.
|
| EP1AGX35CF1152I6N EP1AGX35DF1152C6N |
The ArriaTM GX family of devices combines 3.125 gigabits per second (Gbps) serial transceivers with reliable packaging technology
FPGA, 33520 CLBS, PBGA1152 35 X 35 MM, 1 MM PITCH, BGA-1152
|
Altera Corporation
Altera, Corp.
|
| 2FB96F 2FB96M 2FB30F |
FUTURE BUS 2.00mm CENTERLINE EIA STANDARD
|
Adam Technologies, Inc.
|
| PJ3100 |
7V; 300mA CMOS LDO with enable. For battery-powered devices, personal communication devices
|
PROMAX-JOHNTON
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| EPC1064 EPC1064V EPC1 EPC1213 EPC1441 EP20K200C EP |
CONFIGURATION DEVICES FOR SRAM-BASED LUT DEVICES
|
Altera Corporation
ETC
|
