| PART |
Description |
Maker |
| AFT05MS003N |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| MRFE6VP61K25HR6 MRFE6VP61K25HSR6 |
RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode
|
Freescale Semiconductor, Inc
|
| IPL65R650C6S |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STL20N6F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPW60R070P6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STD105N10F7AG |
High avalanche ruggedness
|
STMicroelectronics
|
| STL66N3LLH5 |
High avalanche ruggedness
|
STMicroelectronics
|
| STP110N8F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| STW70N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STF140N8F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| STH315N10F7-2 |
High avalanche ruggedness
|
STMicroelectronics
|
