| PART |
Description |
Maker |
| MAGX-000035-05000P |
GaN Wideband 50 W Pulsed Transistor in Plastic Package
|
M/A-COM Technology Solution...
|
| NPA1006 |
GaN Wideband Power Amplifier, 28 V, 12.5 W
|
M/A-COM Technology Solu...
|
| GRM21BF51C106ZE15L GRM188R71H103KA01D 100A3R3BW150 |
225MHz TO 1215MHz, 9W GaN WIDEBAND
|
RF Micro Devices
|
| ECE-V1HA101UP RF3932SQ EEV-TG2A101M ERJ-8GEYJ100V |
60W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| BFG198 |
NPN 8GHz wideband transistor(NPN 8G赫兹 宽带晶体
NPN 8 GHz wideband transistor
|
NXP
Philips Semiconductors
|
| BFG92A/X BFG92X |
NPN 5 GHz wideband transistor
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
|
Philips Semiconductors
|
| A3G18H500-04S A3G18H500-04SR3 |
RF Power GaN Transistor
|
NXP Semiconductors
|
| G22001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| T1G4005528-FS T1G4005528-FS-EVB1 T1G6001528-Q3 T1G |
55W, 28V, DC ?3.5GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T2G4003532-FS-15 |
30W, 32V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T1G2028536-FSEVB1 T1G2028536-FS-15 |
285W, 36V DC ?2 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
