| PART |
Description |
Maker |
| BAT65 Q62702-A990 |
Silicon Schottky Diode (Low-power Schottky rectifier diode)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BAT17 BAT17-05W BAT17-06 BAT17-07 BAT17-04 BAT17-0 |
Schottky Diodes - Silicon RF Schottky diode for mixer applications in the VHF/UHF range
Silicon Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
| Q62702-A764 BAT30 |
silicon sohottlky diode RF detector low-power bias very low capaacitance For freguencies up to 25Ghz
FILTER BANDPASS 2.4GHZ 1008 SMD
silicon schottky diode (RF detector Low-power mixer Zerobias Very low capacitance for frequencies up to 25 GHz)
From old datasheet system
silicon schottky diode (RF detector, Low-power mixer, Zerobias, Very low capacitance, for frequencies up to 25 GHz)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BAT165 Q62702-A1190 BAT165Q62702A1190 |
CY8C24123A CY8C24223A, CY8C24423A PSoC® Mixed-Signal Array
Silicon Schottky Diode (Low-power Schottky rectifier diode Miniature plastic package for surface mounting SMD)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BAS40DW-04 BAS40DW-05-TP BAS40DW-06-TP BAS40TW BAS |
200mW SCHOTTKY BARRIER Diode
DIODE SCHOTTKY 200MW 40V SOT363 0.2 A, 40 V, 4 ELEMENT, SILICON, SIGNAL DIODE
DIODE SCHOTTKY ARRAY 40V SOT-363 0.2 A, 40 V, 3 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
| STPSC1006 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| BAS40-02L BAS40-04 BAS40-07W BAS140 BAS140W BAS4 B |
Latest Silicon Discretes - Schottky Diode for switching applications
Silicon Schottky Diode 硅肖特基二极
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| MMBTH10 MMBTSA1037 MMBTSA1162 MMBTSA1182 1SS390 MM |
NPN Silicon VHF/UHF Transistor
PNP Silicon Epitaxial Planar Transistor
SILICON EPITAXIAL PLANAR DIODE
NPN Silicon Epitaxial Planar Transistors
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
PNP SILICON EPITAXIAL POWER TRANSISTOR
BAND SWITCHING DIODE
SILICON EPITAXIAL PLANAR SWITCHING DIODE
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
SEMTECH ELECTRONICS LTD...
|
| NTE5864 NTE5889 NTE5865 |
Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A.
Silicon Power Rectifier Diode, 25 Amp
Silicon Power Rectifier Diode 25 Amp
Silicon Power Rectifier Diode / 25 Amp
|
NTE[NTE Electronics]
|
| SR02150 SR0220 SR02100-HF-T SR02200-HF-F SR0220-HF |
LOW Vf SCHOTTKY BARRIER RECTIFIER
0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 20 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-41
|
Rectron Semiconductor
RECTRON LTD
|
