| PART |
Description |
Maker |
| IXTL13N65 IXTH24N45 IXTL18N50 IXTL24N40 IXTH21N45 |
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 13A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-218VAR
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 18A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 24A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 21A I(D) | TO-218VAR 晶体管| MOSFET的| N沟道| 450V五（巴西）直| 21A条（丁）|18VAR
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 18A I(D) | TO-3 晶体管| MOSFET的| N沟道|650V五（巴西）直| 18A条（丁）|
|
IXYS, Corp.
|
| IRFF431 2N6783 IRFF223 |
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.75A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.2A I(D) | TO-39
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-39 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 3A条（丁）| TO - 39封装
|
Fairchild Semiconductor, Corp.
|
| FDN342P |
P-Channel 2.5V Specified PowerTrench MOSFET
TRANSISTOR|MOSFET|P-CHANNEL|20VV(BR)DSS|2AI(D)|TO-236AB
P-Channel 2.5V Specified PowerTrench⑩ MOSFET
|
Fairchild Semiconductor
|
| SUP45N03-13L |
N-Channel Enhancement-Mode Transistor
N-Channel 30-V (D-S), 175C MOSFET
N-Channel MOSFET
N-Channel 30-V (D-S), 175C MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| FQP85N06 |
60V N-Channel MOSFET 85 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TRANSISTOR|MOSFET|N-CHANNEL|60VV(BR)DSS|85AI(D)|TO-220AB
|
Fairchild Semiconductor, Corp.
|
| BUZ103SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.8 A, 55 V, 0.055 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
4.8 A, 55 V, 0.055 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
|
Siemens Semiconductor Group
SIEMENS AG
Infineon Technologies AG
|
| BUZ104SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Infineon Technologies AG
|
| BUZ102AL C67078-S1356-A2 BUZ102ALE3045A |
N-Channel SIPMOS Power Transistor
From old datasheet system
SIPMOS ? Power Transistor
42 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated) 42 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
|
SIEMENS[Siemens Semiconductor Group]
Infineon Technologies AG
|
| IRFU320A IRFR320A |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.1A I(D) | TO-251AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.1A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 3.1AI（四）|52AA
|
|
| STD12NE06L STD12NE06L-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-251AA 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 12A条（丁）|51AA
N - CHANNEL 60V - 0.09ohm- 12A TO-251/TO-252 STripFET POWER MOSFET
N-CHANNEL POWER MOSFET
|
California Eastern Laboratories, Inc.
STMicroelectronics
ST Microelectronics
|
| IRHN250 IRHN450 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18.5A I(D) | SMT
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | SMT 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 8A条（丁）|贴片
|
Black Box, Corp.
|
|
