| PART |
Description |
Maker |
| BYC8G-600-TA2-T BYC8L-600-TA2-T BYC8-600 |
ULTRAFAST, LOW SWITCHING LOSS RECTIFIER DIODE
|
Unisonic Technologies
|
| BYC5-600 |
Rectifier diode ultrafast/ low switching loss
|
Philips Semiconductors
|
| BAR65-02 BAR65-02W |
Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-diode Band switch for TV-tuners)
|
Siemens Semiconductor G...
|
| BAT18 BAT18-06 BAT18-05 BAT18-04 |
Silicon RF Switching Diode
Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| PMF290XN |
N-channel uTrenchmos (tm) extremely low level FET
N-channel mTrenchMOS extremely low level FET
N-channel mTrenchMOS extremely low level FET
|
http://
PHILIPS[Philips Semiconductors]
|
| PMWD20XN |
Dual N-channel microTrenchMOS(tm) extremely low level FET
DUAL N-CHANNEL UTRENCHMOS EXTREMELY LOW LEVEL FET
|
NXP Semiconductors
Philips Semiconductors
|
| BYC10B-600 |
Rectifier diode ultrafast, low switching loss
Rectifier diode ultrafast/ low switching loss
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BYC8G-6-SMB-R BYC8G-6-TA2-T BYC8G-6-TN3-R BYC8L-6- |
ULTRAFAST, LOW SWITCHING LOSS RECTIFIER DIODE
ULTRAFAST, LOW SWITCHING LOSS RECTIFIER DIODE
|
Unisonic Technologies
|
| BAT18- BAT18-04 BAT18-05 BAT18-06 Q62702-A938 BAT1 |
CAP 4-ARRAY 1.0UF 6.3V X7R 1206
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IPW65R041CFD |
extremely low losses due to very low fom rdson qg and eoss
|
Infineon Technologies AG
|
| SBAT54XV2T1G BAT54XV2T5G |
Schottky Barrier Diodes Extremely Fast Switching Speed
|
ON Semiconductor
|
| LBAT54SWT3G LBAT54SWT1G-11 |
Dual Series Schottky Barrier Diodes Extremely Fast Switching Speed
|
Leshan Radio Company
|
