| PART |
Description |
Maker |
| FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率，高频率，按包装类
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| 2SC3355 2SC3355-T |
For amplify low noise and high frequency
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|
| FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| SPW |
Special Purpose, High Frequency Load (Tubes), High Stability and Excellent High Frequency Characteristics, Particularly Suited for High Frequency Applications
|
Vishay
|
| MAX7384B MAX7384CRVT MAX7384CRVB MAX7384CMUK MAX73 |
11.0592 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching and reset output
12 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching and reset output
Replaced by SN54197 : 50/30/100-Mhz Presettable Decade OR Binary Counters/Latches 14-CDIP -55 to 125 硅振荡器的低功耗高频开关和复位输出
14.7456 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching and reset output
10 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching and reset output
|
Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
|
| KSD288 KSD288YTU KSD288Y |
Power Regulator Low Frequency High Power Amplifier
NPN Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| KSC1623 |
NPN (LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSC)
|
SAMSUNG[Samsung semiconductor]
|
| KPD1203K |
Unbiased for low frequency or biased for high frequency measurement
|
List of Unclassifed Manufacturers
|
| KSD73 KSD73O KSD73Y KSD73YTSTU KSD73YTU |
NPN Epitaxial Silicon Transistor
Low Frequency High Power Amplifier
|
Fairchild Semiconductor
|
| 2SD1591 |
Audio Frequency Power Amplifier and Low Speed High Current Switching Industrial Use
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| JANS2N3439 JANS2N3439E4 JANS2N3439E3 JANS2N3440 JA |
This family of high-frequency, epitaxial planar transistors feature low saturation voltage.
NPN LOW POWER SILICON TRANSISTOR
NPN LOW POWER SILICON TRANSISTOR
|
Microsemi Corporation
|
