| PART |
Description |
Maker |
| SI3461-E02-GM SI3461-E02-GMR SI3462-E01-GM SI3462- |
The behavior of the Si3462 is similar functionally to the Si3461
|
Silicon Laboratories
|
| AN533 |
The behavior of a semiconductor device depends
|
STMicroelectronics
|
| SDP20S3010 SDP20S30 |
Silicon Carbide Schottky Diode Switching behavior benchmark
|
Infineon Technologies AG
|
| AN1379 |
Z01 AND ACS BEHAVIOR COMPARISON TOWARDS FAST VOLTAGE TRANSIENTS
|
SGS Thomson Microelectronics
|
| SDB20S3007 SDB20S30 |
Silicon Carbide Schottky Diode Switching behavior benchmark No reverse recovery
|
Infineon Technologies AG
|
| NMM0207SI |
Fusible Resistor for Constant Current, Designed for Overload Protection, Flame Retardant Coating, Defined Switch-Off Behavior
|
Vishay
|
| NMA....SI |
Fusible Type Metal Film Resistors, Fusible resistor for constant current designed for overload protection, Flame retardant coating, Defined switch-off behavior
|
Vishay
|
| NKS. |
Fusible Type Metal Film Resistors, Fusible resistor for constant current designed for overload protection, Flame retardant coating, Defined switch-off behavior
|
Vishay
|
