PART |
Description |
Maker |
IXGN400N30A3 |
Ultra-Low-Vsat PT IGBT for up to 10kHz Switching
|
IXYS Corporation
|
IXGH25N100 IXGH25N100A IXGM25N100A IXGM25N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD Low V High speed IGBT
|
IXYS, Corp. IXYS[IXYS Corporation]
|
BUP313D Q67040-A4228-A2 BUP313-D |
From old datasheet system IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free) IGBT Duopack (IGBT with Antiparallel ...
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|
Q67078-A4400-A2 BUP200 BUP200SMD |
IGBT Transistor From old datasheet system IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
IXGM20N60A IXGM20N60 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
IXGH12N100U1 IXGH12N100 IXGH12N100AU1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
KSC2331 |
NPN LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING)
|
SAMSUNG[Samsung semiconductor]
|
TAG-1035 |
5.8 TO 6.4 GHZ GAAS MMIC VSAT (C-BAND) POWER AMPLIFIER MMIC VSAT Power Amplifier
|
List of Unclassifed Manufacturers ETC Teledyne Relays
|
BAV199 Q62702-A921 |
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Connected in series) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BAV170 Q62702-A920 |
From old datasheet system Silicon Low Leakage Diode Array (Low leakage applications Medium speed switching times Common cathode) 硅低漏二极管阵列(低泄漏应用中速切换时间普通阴极)
|
SIEMENS A G SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|