| PART |
Description |
Maker |
| VT60L45PW |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| VSSA3L6S-M3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| VT5200-E3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| STB30H100C |
Trench MOS Schottky technology
|
Sangdest Microelectroni...
|
| IGB15N60T |
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
|
INFINEON[Infineon Technologies AG]
|
| VFT3080S-M3-4W |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V10PM12-M3 |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| 5V100-DO |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|
| VBT3045CBP-E3-8W |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| TSF10U60C |
Trench MOS Barrier Schottky Rectifier
|
Taiwan Semiconductor Company, Ltd
|
| V10WM100-M3I |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
