| PART |
Description |
Maker |
| VSSAF5N50 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| VE2045C-E3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| VT1060C-E3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| VF60100C |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| STB30H100C |
Trench MOS Schottky technology
|
Sangdest Microelectroni...
|
| Q67040S4721 Q67040S4723 Q67040S4725 IGW50N60T IGB5 |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| V10WL45-M3 V10WL45-M3I |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| 6L45-DO 6L45-DO-201AD |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|
| 5L100-DO-201AD |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|
| 8L45-DO |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|
| VT1045CBP-M3-4W VT1045CBP12 |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V8P10-15 |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
