| PART |
Description |
Maker |
| MBR2X050A100 |
Electrically Isolated Base Plate
|
GeneSiC Semiconductor, ...
|
| IT310 IT315 |
(IT3xx) ISOTAB TRIACS ELECTRICALLY ISOLATED
|
ETC
|
| IXSR40N60BD1 |
IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)
|
IXYS[IXYS Corporation]
|
| IXGR32N60C |
HiPerFASTTM IGBT Lightspeed Series ISOPLUS247TM package(Electrically Isolated Back Side)
|
IXYS Corporation
|
| DSEP30-12CR L373 |
HiPerDynFRED with soft recovery (Electrically Isolated Back Surface) 30 A, 1200 V, SILICON, RECTIFIER DIODE
Fast Recovery Diodes
|
IXYS, Corp.
IXYS[IXYS Corporation]
ETC
|
| ISPLSI2128A-100LQ160 ISPLSI2128A-80LT176 ISPLSI212 |
Electrically-Erasable Complex PLD
Electrically-ErasableComplexPLD
|
|
| IRFK4H250 IRFK4J250 |
ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION
|
International Rectifier
|
| IRFK2D250 |
(IRFK2D250 / IRFK2F250) Isolated Base Power HEX-pak Assembly-Half Bridge Configuration
|
International Rectifier
|
| IRFK2DE50 |
(IRFK2DE50 / IRFK2FE50) ISOLATED BASE POWER HEX-PAK ASSEMBLY - HALF BRIDGE CONFIGURATION
|
International Rectifier
|
| ATF16V8B-15PC ATF16V8B ATF16V8B-10PC ATF16V8B/BQ/B |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
ATF16V8B/BQ/BQL [Updated 4/01. 19 Pages] 250 gate electrically erasable PLD. 20 pins
From old datasheet system
250 gate electrically erasable PLD, 20 pins
|
Atmel, Corp.
Atmel Corp
|
| IXFRB24N50Q IXFR24N50Q IXFR26N50Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HIPERFET POWER MOSFETS ISOPLUS247 (ELECTRICALLY ISOLATED BACK SURFACE)
|
IXYS Corporation
|
