| PART |
Description |
Maker |
| PE6203 |
Medium Power 25 Watts RF Load Up To 18 GHz
|
Pasternack Enterprises,...
|
| 5KP45APT |
VOLTAGE-5.0 TO 110 VOLTS 5000 WATTS PEAK POWER 8.0 WATTS STEADY STATE
|
Chenmko Enterprise Co. Ltd.
|
| SBM52414X SBM52414Z SBM51414G SBM51414N SBM51414Z |
Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving 中功率比迪光学标准模310纳米发光550纳米接收
Transceiver
Components and FTTx solutions - Tx 1310nm/Rx 1550nm, Medium Power
|
INFINEON[Infineon Technologies AG]
|
| STM51004A STM51004G STM51004X STM51005A STM51005G |
1300 nm Laser in Receptacle Package, Medium Power 1300 nm激光在插孔包，中功
(STM51004 / STM51005) 1300 nm Laser in Receptacle Package / Medium Power
1300 nm Laser in Receptacle Package,Medium Power
1300 nm Laser in Receptacle Package Medium Power
From old datasheet system
1300 nm Laser, Medium Power
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G |
50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
MGA-545P8 · Low Current 22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems
|
Agilent Technologies, Inc.
Agilent (Hewlett-Packard)
|
| 2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A)
Medium Power Transistor (?32V,?1A)
Power Transistor (?60V, ?3A)
Low-frequency Transistor (-80V, -0.5A)
Power Transistor (?80V, ?1A)
Low VCE(sat) Transistor (?20V, ?3A)
Power transistor (?20V, ?2A)
General purpose amplification (?30V, ?1A)
Low frequency amplifier
Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| BCP54 BCP54-16 BCP56-10 BCP56-16 BCP55-10 BCP55-16 |
NPN medium power transistors
TRANSISTOR MEDIUM POWER 晶体管中功率
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
Microchip Technology, Inc.
|
| VFP-4 Y073321K5000A0L Y073421K5000A0L Y073321K5000 |
Bulk Metal㈢ Foil Technology Power and Current Sensing Resistors with TCR of 2 ppm/∑C, Tolerance to 【 0.01 % and power up to 10 Watts
Bulk Metal? Foil Technology Power and Current Sensing Resistors with TCR of 2 ppm/°C, Tolerance to ± 0.01 % and power up to 10 Watts
Bulk Metal庐 Foil Technology Power and Current Sensing Resistors with TCR of 2 ppm/掳C, Tolerance to 卤 0.01 % and power up to 10 Watts
Bulk Metal垄莽 Foil Technology Power and Current Sensing Resistors with TCR of 2 ppm/隆?C, Tolerance to 隆戮 0.01 % and power up to 10 Watts
|
Vishay Siliconix
|
| Y002625K5000A0L Y002725K5000A0L Y002625K5000A9L Y0 |
Bulk Metal㈢ Foil Technology Power Current Sensing Resistors with TCR of 5 ppm/∑C and Power Rating up to 7 Watts
Bulk Metal垄莽 Foil Technology Power Current Sensing Resistors with TCR of 5 ppm/隆?C and Power Rating up to 7 Watts
Bulk Metal庐 Foil Technology Power Current Sensing Resistors with TCR of 5 ppm/掳C and Power Rating up to 7 Watts
Bulk Metal? Foil Technology Power Current Sensing Resistors with TCR of 5 ppm/°C and Power Rating up to 7 Watts
|
Vishay Siliconix
|
