| PART |
Description |
Maker |
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| DMTH10H015LK3-13 |
Qualified to AEC-Q101 Standards for High Reliability
|
Diodes Incorporated
|
| DMN3008SFG-13 |
Qualified to AEC-Q101 Standards for High Reliability
|
Diodes Incorporated
|
| DMG7410SFG-13 |
Qualified to AEC-Q101 Standards for High Reliability
|
Diodes Incorporated
|
| DMTH10H030LK3-13 |
Qualified to AEC-Q101 Standards for High Reliability
|
Diodes Incorporated
|
| MG400Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
| MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Mitsubishi Electric Semiconductor
Toshiba Corporation
|
| SGF23N60UFD SGF23N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 23 A, 600 V, N-CHANNEL IGBT
Ultra-Fast IGBT
Discrete, High Performance IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IXGH25N100 IXGH25N100A IXGM25N100A IXGM25N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
Low V High speed IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MPQ4470AGL MPQ4470GL MPQ4470GL-AEC1 |
High-Efficiency, Fast-Transient, 5A, 36V Synchronous, Step-Down Converter AEC-Q100 Qualified
|
Monolithic Power Systems
|
| DSCC05002 |
Surface Mount Multilayer Ceramic Chip Capacitors High Frequency DSCC Qualified Type 05002
|
Vishay Siliconix
|
